Magnetic sensor

ABSTRACT

17

BACKGROUND OF THE INVENTION Field of the Invention

The present application is based on, and claims priority from, JP Application No. 2018-199998, filed on Oct. 24, 2018, the disclosure of which is hereby incorporated by reference herein in its entirety.

The present invention relates to a magnetic sensor, and particularly to a magnetic sensor using a magnetoresistance effect element.

Description of the Related Art

A magnetic sensor that includes a magnetoresistance effect element detects an external magnetic field based on a resistance change that is caused by a magnetoresistance effect. The magnetic sensor that uses a magnetoresistance effect element has a higher output and a higher sensitivity to a magnetic field than other magnetic sensors, and it is also easy to reduce in size. A magnetic sensor generally has a multilayer film structure in which a free layer, whose magnetization direction changes in response to an external magnetic field, a spacer layer, that exhibits a magnetoresistance effect, and a pinned layer whose magnetization direction is fixed with respect to the external magnetic field are stacked in this order. US2003/0030949 discloses a magnetic sensor having a magnet film that is provided on the lateral side of a free layer. WO2014/208105 discloses a magnetic sensor having a conductor film that applies a lateral bias magnetic field to the surface of a magnet film.

A magnet film that is provided on the lateral side of a free layer makes the magnetization direction of the free layer uniform. However, in addition to the output characteristic of the magnetic sensor, the magnetic characteristic of the magnet film is also influenced by the environmental temperature.

The present invention aims at providing a magnetic sensor whose output characteristic is less sensitive to the environmental temperature due to the controlled magnetic characteristics of the magnet film that is provided on the lateral side of a free layer.

SUMMARY OF THE INVENTION

A magnetic sensor of the present invention comprises: a free layer whose magnetization direction changes in response to an external magnetic field; a pinned layer whose magnetization direction is fixed with respect to the external magnetic field; a spacer layer that is located between the pinned layer and the free layer and that exhibits a magnetoresistance effect; and at least one magnet film that is disposed on a lateral side of the free layer and that applies a bias magnetic field to the free layer. The relationship of 0.7≤T_(C_HM)/T_(C_FL)≤1.05 is satisfied, where T_(C_HM) is the Curie temperature of the magnet film, and T_(C_FL) is the Curie temperature of the free layer.

According to the present invention, a magnetic sensor whose output characteristic is less sensitive to the environmental temperature can be provided.

The above and other objects, features and advantages of the present invention will become apparent from the following description with reference to the accompanying drawings which illustrate examples of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram schematically illustrating the configuration of a magnetic sensor;

FIGS. 2A-2B are views schematically illustrating a configuration of a magnetoresistance effect element;

FIG. 2C is a view schematically illustrating magnetization of a free layer, an inner pinned layer and an outer pinned layer in a zero magnetic field state;

FIGS. 3A-3B are conceptual diagrams explaining an output and an offset of a magnetic sensor;

FIGS. 4A-4B are graphs showing measurements of an offset change versus the environmental temperature;

FIG. 5 is a graph showing a relationship between T_(C_HM)/T_(C_FL) and the offset change;

FIG. 6 is a graph showing the relationship between the film thickness of the magnet film and M_(S)t_(_HM)/M_(S)t_(_FL).

FIGS. 7A-7B are graphs explaining parameters that influence the Curie temperature;

FIG. 8 is a conceptual diagram illustrating the relationship between the Curie temperature of a magnet film, the temperature of the magnet film at which an anisotropic magnetic field thereof becomes zero and the temperature of the magnet film at which a coercive force thereof becomes zero; and

FIGS. 9A-9B are views schematically illustrating a current sensor that uses a magnetic sensor of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Hereinafter, a magnetic sensor according to an embodiment of the present invention will be described with reference to the drawings. In the following explanation and drawings, X-direction is the magnetically sensitive direction of the magnetic sensor, and also corresponds both to the magnetization direction of the pinned layer and to the short axis direction of the magnetoresistance effect element. Y-direction is the direction orthogonal to the magnetically sensitive direction (X-direction) of the magnetic sensor, and also corresponds both to the magnetization direction of the free layer in the zero magnetic field state and to the long axis direction of the magnetoresistance effect element. In the present specification, the “zero magnetic field” means a state where a magnetic field other than a bias magnetic field is not present. Z-direction is a direction orthogonal both to the X-direction and to the Y-direction, and also corresponds to the stacking direction of the multilayer film of the magnetoresistance effect element. It should be noted that the direction of the arrow showing the X-direction in each drawing may be referred to as a +X-direction and that a direction opposite to the direction of the arrow may be referred to as −X-direction.

FIG. 1 illustrates a schematic circuit configuration of the magnetic sensor. Magnetic sensor 1 has four magnetoresistance effect elements (hereinafter, referred to as first magnetoresistance effect element 11, second magnetoresistance effect element 12, third magnetoresistance effect element 13 and fourth magnetoresistance effect element 14), and magnetoresistance effect elements 11 to 14 are connected to each other by a bridge circuit (the Wheatstone bridge). Four magnetoresistance effect elements 11 to 14 are divided into two sets, that is, a set of magnetoresistance effect elements 11, 12 and a set of magnetoresistance effect elements 13, 14, and magnetoresistance effect elements 11, 12 and magnetoresistance effect elements 13, 14 are connected in series, respectively. One end of the set of magnetoresistance effect element set 11, 12 and one end of the set of magnetoresistance effect element set 13, 14 are connected to power supply voltage Vcc, and the other ends are connected to the ground (GND). Midpoint voltage V1 between first magnetoresistance effect element 11 and second magnetoresistance effect element 12, and midpoint voltage V2 between third magnetoresistance effect element 13 and fourth magnetoresistance effect element 14 can be taken out. Accordingly, mid-point voltages V1, V2 can be obtained by the following equations, respectively, where electric resistances of first to fourth magnetoresistance effect elements 11 to 14 are R1 to R4, respectively.

$\begin{matrix} {V_{1} = {\frac{R_{2}}{R_{1} + R_{2}}V_{cc}}} & \left( {{Equation}\mspace{14mu} 1} \right) \\ {V_{2} = {\frac{R_{3}}{R_{3} + R_{4}}V_{cc}}} & \left( {{Equation}\mspace{14mu} 2} \right) \end{matrix}$

FIGS. 2A and 2B are conceptual views schematically illustrating the configuration of first to fourth magnetoresistance effect elements 11 to 14. Since first to fourth magnetoresistance effect elements 11 to 14 have the same configuration, first magnetoresistance effect element 11 will be described here. FIG. 2A is a schematic perspective view of first magnetoresistance effect element 11, and FIG. 2B is a sectional view taken along line A-A in FIG. 2A. First magnetoresistance effect element 11 has a typical spin valve type film configuration. First magnetoresistance effect element 11 is formed of stacked layers that include antiferromagnetic layer 21, pinned layer 22, spacer layer 23 and free layer 24, which are stacked in this order. Pinned layer 22 is composed of inner pinned layer 22A, nonmagnetic intermediate layer 22B and outer pinned layer 22C, wherein inner pinned layer 22A is in contact with spacer layer 23, and outer pinned layer 22C is in contact with antiferromagnetic layer 21. The stacked layers are sandwiched by a pair of electrode layers (not illustrated) in the Z-direction in order to allow a sense current to flow in the Z-direction from the electrode layer to the stacked layers.

Free layer 24 is a magnetic layer whose magnetization direction changes in response to an external magnetic field and may be formed, for example, of NiFe. Outer pinned layer 22C is a ferromagnetic layer whose magnetization direction is fixed with respect to the external magnetic field due to an exchange coupling with antiferromagnetic layer 21. Antiferromagnetic layer 21 may be formed of PtMn, IrMn, NiMn and the like. Inner pinned layer 22A is a ferromagnetic layer that is sandwiched between outer pinned layer 22C and spacer layer 23 and is magnetically, or more specifically, antiferromagnetically, coupled with outer pinned layer 22C via nonmagnetic intermediate layer 22B that is formed of Ru, Rh and the like. Accordingly, the magnetization directions of both inner pinned layer 22A and outer pinned layer 22C are fixed with respect to the external magnetic field, but the magnetization directions are antiparallel to each other. Spacer layer 23 is a nonmagnetic layer that is located between free layer 24 and inner pinned layer 22A and that exhibits a magnetoresistance effect. Spacer layer 23 may be a nonmagnetic conductive layer that is formed of a nonmagnetic metal, such as Cu, or may be a tunnel barrier layer that is formed of a nonmagnetic insulator, such as Al₂O₃. When spacer layer 23 is a nonmagnetic conductive layer, first magnetoresistance effect element 11 functions as a giant magnetoresistance effect (GMR) element, and when spacer layer 23 is a tunnel barrier layer, first magnetoresistance effect element 11 functions as a tunnel magnetoresistance effect (TMR) element. First magnetoresistance effect element 11 is more preferably a TMR element because of a higher MR change rate and because of a higher output voltage of the bridge circuit. In the present embodiment, first magnetoresistance effect element 11 is a TMR element.

Pinned layer 22 may be formed as a single layer by omitting inner pinned layer 22A (or outer pinned layer 22C) and nonmagnetic intermediate layer 22B. However, pinned layer 22 that is made of a synthetic structure composed of inner pinned layer 22A, nonmagnetic intermediate layer 22B and outer pinned layer 22C can make the magnetization direction of inner pinned layer 22A more stable than pinned layer 22 that is made of a single layer structure. Further, the magnetic field that leaks to the outside can be limited because the magnetic field that is released from inner pinned layer 22A is cancelled by the magnetic field that is released from outer pinned layer 22C. For these reasons, pinned layer 22 is preferably made of a synthetic structure.

At least one magnet film 25 is provided on the lateral side of first magnetoresistance effect element 11 in the Y-direction. In the present embodiment, a pair of magnet films 25 is provided on both lateral sides of first magnetoresistance effect element 11 in the Y-direction. Magnet films 25 are located on the lateral sides of free layer 24 and pinned layer 22 in the Y-direction, but may be located at least on the lateral side of free layer 24 in the Y-direction. Insulating films (not illustrated) that prevent the occurrence of a short circuit between free layer 24 and pinned layer 22 are provided between free layer 24 and magnet films 25 and between pinned layer 22 and magnet films 25. Magnet films 25 apply a bias magnetic field to free layer 24 in the Y-direction, aligning the magnetization direction of free layer 24 in the Y-direction in the zero magnetic field state. Magnet films 25 are mainly formed of CoPt, FePt or SmCo, and may further contain at least one element selected from the group consisting of Cr, Ta, B, Ni, Ti, W, V, Mo, Mn, Zr, Nb, Hf, Si, Cu, Ag, Al, Ru and Rh. Here, the term “mainly” means that the total atomic fraction of the element is 70% or more.

As illustrated in FIG. 2A, first magnetoresistance effect element 11 has a substantially rectangular shape having long axis LA and short axis SA, as well as short sides S that face a pair of magnet films 25, as seen in the Z-direction. Accordingly, free layer 24, inner pinned layer 22A and outer pinned layer 22C has each a substantially rectangular shape having short sides S that face the pair of magnet films 25.

FIG. 2C conceptually illustrates magnetization of free layer 24, inner pinned layer 22A and outer pinned layer 22C in the zero magnetic field state. The arrows in the drawing schematically show the magnetization direction of each layer. Free layer 24 is magnetized substantially in the long axis LA direction (Y-direction) in the zero magnetic field state due to the bias magnetic field from magnet films 25. Inner pinned layer 22A and outer pinned layer 22C are magnetized in a substantially short axis SA direction (X-direction), and the magnetization directions are antiparallel to each other, as described above. When an external magnetic field is applied in the X-direction, that is, in the magnetically sensitive direction, the magnetization direction of free layer 24 rotates clockwise or counterclockwise in FIG. 2C in accordance with the direction and the strength of the external magnetic field. Thus, a relative angle between the magnetization direction of inner pinned layer 22A and the magnetization direction of free layer 24 changes, and accordingly, electric resistance to the sense current changes. Inner pinned layer 22A may also be called a reference layer because it provides a reference of rotation angle of the magnetization direction for free layer 24.

Referring again to FIG. 1, the magnetization of inner pinned layers 22A of first to fourth magnetoresistance effect elements 11 to 14 are directed in the direction of the arrows in the drawing. Accordingly, when an external magnetic field is applied in the +X direction, electric resistances of first and third magnetoresistance effect elements 11,13 decrease, while electric resistances of second and fourth magnetoresistance effect elements 12,14 increase. Thus, as illustrated in FIG. 3A, midpoint voltage V1 increases, and midpoint voltage V2 decreases. When an external magnetic field is applied in the −X direction, midpoint voltage V1 decreases and midpoint voltage V2 increases, contrary to the above. By detecting difference V1-V2 of midpoint voltages V1, V2, the sensitivity can be doubled as compared to detecting midpoint voltages V1, V2 separately. Further, when midpoint voltages V1, V2 are offset (that is, midpoint voltages V1, V2 are shifted along the output axis in FIG. 3A), the influence of the offset can be eliminated by detecting the difference.

However, due to the variation of first to fourth magnetoresistance effect elements 11 to 14, equations 1 and 2 do not strictly apply and some errors occur. Therefore, as illustrated in FIG. 3B, which is an enlarged view of part A in FIG. 3A, an offset occurs in difference V1-V2. The offset is a deviation of difference V1-V2 from zero in the zero magnetic field state. The offset influences the accuracy with which an external magnetic field is measured.

The magnitude of the offset changes depending on the environmental temperature of the magnetoresistance effect element. For example, in the case of a TMR element, electric resistance decreases when the temperature is high. Further, in the case of a TMR element, output decreases because the MR change rate decreases when the temperature is high. These temperature characteristics influence the magnitude of the offset. Further, since magnetic sensor 1 is used in a wide temperature range of approximately −50 to 150° C., the offset tends to variate in a wider range. However, it is difficult to control the environmental temperature, and it is therefore desirable that the offset be essentially less sensitive to the environmental temperature.

Further, in magnetic sensor 1 including magnet film 25, temperature dependency of the offset depends on the Curie temperature (a temperature at which the ferromagnetic property is lost) of magnet film 25. In order to cope with this problem, magnetic sensor 1 of the present embodiment satisfies the relationship of 0.7≤T_(C_HM)/T_(C_FL)≤1.05, more preferably, 0.7≤T_(C_HM)/T_(C_FL)≤0.9, where T_(C_HM) is the Curie temperature of magnet film 25, and T_(C_FL) is the Curie temperature of free layer 24. Hereinafter, an example will be described.

A plurality of magnetic sensors 1 having the block circuit illustrated in FIG. 1 and the film configuration illustrated in FIGS. 2A and 2B were manufactured. Each of first to fourth magnetoresistance effect elements 11 to 14 was formed into a rectangular shape with long axis LA of 3.5 μm and short axis SA of 0.5 μm, as seen from the Z-direction. Free layer 24 was formed of a CoFe layer (film thickness of 2 nm)/a NiFe layer (film thickness of 6 nm), inner pinned layer 22A was formed of a CoFe layer (film thickness of 1.8 nm), outer pinned layer 22C was formed of a CoFe layer (film thickness of 1.7 nm), antiferromagnetic layer 21 was formed of an IrMn layer (film thickness of 10 nm), and magnet films 25 were formed of CoPt layers (film thickness of 35 nm or 50 nm). The CoFe layer/NiFe layer of free layer 24 means that the CoFe layer is deposited first, that is, the CoFe layer is in contact with spacer layer 23. Spacer layer 23 was formed of MgO, and nonmagnetic intermediate layer 22B was formed of Ru. The Curie temperature of magnet films 25 was changed in a range of 450 K to 900 K, and a change in the offset in relation to a change in the environmental temperature was measured. The Curie temperature was adjusted by changing an atomic fraction of Pt, as illustrated in FIG. 7A.

FIG. 4A shows a measurement of the offset change for magnet films 25 having a film thickness of 35 nm, and FIG. 4B shows a measurement of the offset change for magnet films 25 having a film thickness of 50 nm. The vertical axis shows the offset change. The offset change is normalized by the offset at 50° C. That is, the offset change is a deviation from the offset at 50° C. Referring to FIGS. 4A and 4B, the offset change monotonously increases relative to the environmental temperature when the Curie temperature of magnet films 25 is low, and the offset change monotonously decreases relative to the environmental temperature when the Curie temperature is high. The offset change relative to the environmental temperature is minimized at T_(c)=750 K. The offset shows a significant change when the environmental temperature exceeds 150° C. This is because antiferromagnetic layer 21 has a low blocking temperature and thereby the coupling magnetic field between antiferromagnetic layer 21 and outer pinned layer 22C is reduced when the environmental temperature exceeds 150° C.

The reason why we think that the offset change varies depending on the Curie temperature of magnet films 25 is as follows. In general, the sensitivity of magnetic sensor 1 having a TMR element is reduced when the environmental temperature rises. On the other hand, the bias magnetic field from magnet films 25 changes depending on the relationship between the Curie temperature and the environmental temperature. When the Curie temperature is low, the bias magnetic field of magnet films 25 tends to decrease as the environmental temperature rises. This weakens the force that binds the magnetization direction of free layer 24 (that is, the magnetization direction of free layer 24 easily rotates), and thereby increases the sensitivity. This is a factor that increases the offset change relative to the environmental temperature. When the Curie temperature is high, the decrease of the bias magnetic field is small in this temperature range. Thus, the sensitivity of free layer 24 decreases as the temperature rises. This is the reason why the trending of FIGS. 4A and 4B is obtained. Further, when these factors are balanced, the offset change is minimized.

For magnetic sensor 1 that uses a magnetoresistance effect element having magnet films 25, the maximum output voltage is about 400 mV. If the offset change due to temperature is limited within 1% at largest, then the influence of the offset is, in actual practice, nota large problem. Accordingly, it is desirable that the offset change be limited within about ±4 mV. As described above, the offset change monotonously increases or monotonously decreases. Thus, a target value of an offset change per unit temperature is set at about 0.04 mV/° C. A range of T_(C_HM)/T_(C_FL) (ratio of Curie temperature TC_HM of magnet films 25 to Curie temperature T_(C_FL) of free layer 24) where the offset change is within about 0.04 mV/° C. was obtained in the environmental temperature range of −50 to 150° C. The result is shown in FIG. 5. The result for magnet films 25 having a film thickness of 20 nm is also shown in FIG. 5. When the film thickness of magnet films 25 is 20 nm or 35 nm, the offset change falls within the target in the range of 0.5≤T_(C_HM)/T_(C_FL)≤1.05, and the offset change is minimized in the range of 0.7≤T_(C_HM)/T_(C_FL)≤0.9. When the film thickness of magnet films 25 is 50 nm, the offset change falls within the target in the range of 0.7≤T_(C_HM)/T_(C_FL)≤1.05, and the offset change is minimized in the range of 0.8≤T_(C_HM)/T_(C_FL)≤1.05.

However, when the film thickness of magnet films 25 is large, the output of magnetic head 1 decreases because the bias magnetic field increases and thereby the magnetization direction of free layer 24 is less apt to rotate. On the other hand, magnet films 25 having a small film thickness cannot magnetize free layer 24 into a single magnetic domain. M_(S)t_(_HM)/M_(S)t_(_FL), which is a ratio of a product of saturation magnetization and thickness M_(S)t_(_HM) of magnet film 25 (M_(S) is saturated magnetization of magnet film 25, t is the film thickness of magnet film 25) to a product of saturation magnetization and thickness M_(S)t_(_FL) of free layer 24 (M_(S) is saturated magnetization of free layer 24, t is the film thickness of free layer 24) is preferably two or more and four or less. The product of saturation magnetization and thickness of free layer 24 of the example is 7.8 A (0.78 emu/cm²). Thus, a preferable product of saturation magnetization and thickness of magnet film 25 is 15.6 to 31.2 A (1.56 to 3.12 emu/cm²), which corresponds to 26 to 52 nm when converted into a film thickness. It should be noted that there is a proportional relationship between film thickness t_(_HM) of magnet film 25 and M_(S)t_(_HM)/M_(S)t_(_FL), as shown in FIG. 6.

Accordingly, it is preferable that T_(C_HM)/T_(C_FL) satisfy 0.7≤T_(C_HM)/T_(C_FL)≤1.05, when taking a preferable film thickness of magnet 25 into consideration.

Curie temperature T_(C_HM) of magnet film 25 can be easily adjusted by changing the composition thereof, as described above with reference to FIG. 7A. Curie temperature T_(C_HM) of magnet film 25 can also be adjusted by changing the average grain diameter of magnetic grains, as shown in FIG. 7B. In FIG. 7B, the horizontal axis represents the average grain diameter of magnetic grains that form magnet film 25, as seen in the Z-direction, and the vertical axis represents the Curie temperature. The magnetic film is formed of Co50Pt50, and the Curie temperature varies between 420 K and 830 K in the range of the average grain diameter of 10 nm or more and 50 nm or less. Since Curie temperature T_(C_FL) of free layer 24 is normally in a range of 650 K to 900 K, if the average grain diameter is 10 nm or more and 50 nm or less, the relationship of 0.7≤T_(C_HM)/T_(C_FL)≤1.05 can be easily satisfied.

Further, conceptually, there is a relationship shown in FIG. 8 among the magnetization, the anisotropic magnetic field and the coercive force of magnet film 25 and the environmental temperature. The magnetization and the anisotropic magnetic field of magnet film 25 decrease substantially along identical paths as the temperature increases, and become zero at about the same temperatures. That is, temperature T_(HK=0_HM) of magnet film 25 at which the anisotropic magnetic field becomes zero corresponds to Curie temperature T_(C_HM) of magnet film 25. The coercive force of magnet film 25 also decreases substantially along the same path as the magnetization and the anisotropic magnetic field as the temperature increases, but becomes zero at temperature T_(HC=0_HM) that is slightly lower than Curie temperature T_(C_HM) and temperature T_(HK=0_HM) at which the anisotropic magnetic field becomes zero. However, temperature T_(HC=0_HM) at which the coercive force becomes zero correlates with T_(C_HM) and T_(HK=0_HM). Accordingly, it can be said that there is the relationship of 0.7≤T_(HK=0_HM)/T_(c_FL)≤1.05 between Curie temperature T_(C_FL) of free layer 24 and temperature T_(HK=0_HM) of magnet film 25 at which the anisotropic magnetic field becomes zero and that there is the relationship of 0.7≤T_(HC=0_HM)/T_(C_FL)≤1.05 between Curie temperature T_(C_FL) of free layer 24 and temperature T_(HC=0_HM) of magnet films 25 at which the coercive force becomes zero.

Magnetic sensor 1 described above can be used, for example, in a current sensor. FIG. 9A illustrates a schematic sectional view of current sensor 101 having magnetic sensor 1. FIG. 9B is a sectional view taken along line A-A in FIG. 9A. Magnetic sensor 1 is installed in the vicinity of current line 102 and generates a magnetoresistance change in response to a change in signal magnetic field Bs that is applied. Current sensor 101 has first and second soft magnetic bodies 103, 104, which are means for adjusting magnetic field strength, and solenoid type feedback coil 105 that is provided near magnetic sensor 1. Feedback coil 105 generates cancelling magnetic field Bc that cancels signal magnetic field Bs. Feedback coil 105 spirally winds around magnetic sensor 1 and second soft magnetic body 104. Current i flows in current line 102 in the front-to-back direction in the drawing (y-direction) in FIG. 9A, and from left to right in FIG. 9B. Current i induces clockwise external magnetic field Bo in FIG. 9A. External magnetic field Bo is attenuated by first soft magnetic body 103, is then amplified by second soft magnetic body 104, and is then applied leftward to magnetic sensor 1 as signal magnetic field Bs. Magnetic sensor 1 outputs a voltage signal that corresponds to signal magnetic field Bs, and the voltage signal is inputted to feedback coil 105. Feedback current Fi flows in feedback coil 105, and feedback current Fi generates cancelling magnetic field Bc that cancels signal magnetic field Bs. Signal magnetic field Bs and cancelling magnetic field Bc have the same absolute value and are directed in opposite directions. Therefore, signal magnetic field Bs is cancelled by cancelling magnetic field Bc, and a magnetic field that is applied to magnetic sensor 1 is substantially zero. Feedback current Fi is converted into a voltage by resistance (not illustrated), and is outputted as a voltage. The voltage is proportional to feedback current Fi, cancelling magnetic field Bc and signal magnetic field Bs. Accordingly, a current that flows in current line 102 can be obtained from the voltage.

Although a certain preferred embodiment of the present invention has been shown and described in detail, it should be understood that various changes and modifications may be made without departing from the spirit or scope of the appended claims. 

What is claimed is:
 1. A magnetic sensor comprising: a free layer whose magnetization direction changes in response to an external magnetic field; a pinned layer whose magnetization direction is fixed with respect to the external magnetic field; a spacer layer that is located between the pinned layer and the free layer and that exhibits a magnetoresistance effect; and at least one magnet film that is disposed on a lateral side of the free layer and that applies a bias magnetic field to the free layer, wherein a relationship of 0.7≤T_(C_HM)/T_(C_FL)≤1.05 is satisfied, where T_(C_HM) is Curie temperature of the magnet film, and T_(C_FL) is Curie temperature of the free layer.
 2. The magnetic sensor according to claim 1, wherein a relationship of 0.7≤T_(C_HM)/T_(C_FL)≤0.9 is satisfied.
 3. A magnetic sensor comprising: a free layer whose magnetization direction changes in response to an external magnetic field; a pinned layer whose magnetization direction is fixed with respect to the external magnetic field; a spacer layer that is located between the pinned layer and the free layer and that exhibits a magnetoresistance effect; and at least one magnet film that is disposed on a lateral side of the free layer and that applies a bias magnetic field to the free layer, wherein a relationship of 0.7≤T_(HK=0_HM)/T_(C_FL)≤1.05 is satisfied, where T_(HK=0_HM) is a temperature of the magnet film at which an anisotropic magnetic field thereof becomes zero, and T_(C_FL) is Curie temperature of the free layer.
 4. A magnetic sensor comprising: a free layer whose magnetization direction changes in response to an external magnetic field; a pinned layer whose magnetization direction is fixed with respect to the external magnetic field; a spacer layer that is located between the pinned layer and the free layer and that exhibits a magnetoresistance effect; and at least one magnet film that is disposed on a lateral side of the free layer and that applies a bias magnetic field to the free layer, wherein a relationship of 0.7≤T_(HC=0_HM)/T_(C_FL)≤1.05 is satisfied, where T_(HC=0_HM) is a temperature of the magnet film at which a coercive force thereof becomes zero, and T_(C_FL) is a Curie temperature of the free layer.
 5. The magnetic sensor according to claim 1, wherein the magnet film is mainly formed of CoPt, FePt or SmCo.
 6. The magnetic sensor according to claim 5, wherein the magnet film further contains one or more elements selected from the group consisting of Cr, Ta, B, Ni, Ti, W, V, Mo, Mn, Zr, Nb, Hf, Si, Cu, Ag, Al, Ru and Rh.
 7. The magnetic sensor according to claim 3, wherein the magnet film is mainly formed of CoPt, FePt or SmCo.
 8. The magnetic sensor according to claim 7, wherein the magnet film further contains one or more elements selected from the group consisting of Cr, Ta, B, Ni, Ti, W, V, Mo, Mn, Zr, Nb, Hf, Si, Cu, Ag, Al, Ru and Rh.
 9. The magnetic sensor according to claim 4, wherein the magnet film is mainly formed of CoPt, FePt or SmCo.
 10. The magnetic sensor according to claim 9, wherein the magnet film further contains one or more elements selected from the group consisting of Cr, Ta, B, Ni, Ti, W, V, Mo, Mn, Zr, Nb, Hf, Si, Cu, Ag, Al, Ru and Rh.
 11. The magnetic sensor according to claim 1, wherein an average grain diameter of magnetic grains that forms the magnetic film is 10 nm or more and 50 nm or less, as seen from a direction in which the free layer, the spacer layer and the outer pinned layer are stacked.
 12. The magnetic sensor according to claim 3, wherein an average grain diameter of magnetic grains that forms the magnetic film is 10 nm or more and 50 nm or less, as seen from a direction in which the free layer, the spacer layer and the outer pinned layer are stacked.
 13. The magnetic sensor according to claim 4, wherein an average grain diameter of magnetic grains that forms the magnetic film is 10 nm or more and 50 nm or less, as seen from a direction in which the free layer, the spacer layer and the outer pinned layer are stacked.
 14. The magnetic sensor according to claim 1, wherein the at least one magnet film is a pair of magnet films that are located on both lateral sides of the free layer, and the free layer has a rectangular shape having short sides that face the pair of magnet films, as seen from a direction in which the free layer, the spacer layer and the pinned layer are stacked.
 15. The magnetic sensor according to claim 3, wherein the at least one magnet film is a pair of magnet films that are located on both lateral sides of the free layer, and the free layer has a rectangular shape having short sides that face the pair of magnet films, as seen from a direction in which the free layer, the spacer layer and the pinned layer are stacked.
 16. The magnetic sensor according to claim 4, wherein the at least one magnet film is a pair of magnet films that are located on both lateral sides of the free layer, and the free layer has a rectangular shape having short sides that face the pair of magnet films, as seen from a direction in which the free layer, the spacer layer and the pinned layer are stacked.
 17. The magnetic sensor according to claim 1, wherein a ratio of a product of saturated magnetization and a film thickness of the magnet film to a product of saturated magnetization and a film thickness of the free layer is two or more and four or less.
 18. The magnetic sensor according to claim 3, wherein a ratio of a product of saturated magnetization and a film thickness of the magnet film to a product of saturated magnetization and a film thickness of the free layer is two or more and four or less.
 19. The magnetic sensor according to claim 4, wherein a ratio of a product of saturated magnetization and a film thickness of the magnet film to a product of saturated magnetization and a film thickness of the free layer is two or more and four or less. 